Description: A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal Gate

This title appears in the Scientific Report : 2018

A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal Gate

In this combined experiment and simulation study we investigate a SiGe/Si based gatenormal tunneling field-effect transistor (TFET) with a pillar shaped contact to the tunneling junction which brings forth two significant advantages. The first, is improved electrostatics at the boundary of the tunne...

Personal Name(s):	Glass, Stefan
	Kato, Kimihiko / Kibkalo, Lidia / Hartmann, Jean-Michel / Takagi, Shinichi / Buca, Dan Mihai / Mantl, Siegfried / Qing-Tai, Zhao (Corresponding author)
Contributing Institute:	JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9
Published in:	IEEE journal of the Electron Devices Society, 6 (2018) S. 1070 - 1076
Imprint:	[New York, NY] IEEE 2018
DOI:	10.1109/JEDS.2018.2864581
Document Type:	Journal Article
Research Program:	Controlling Electron Charge-Based Phenomena
Link:	Get full text OpenAccess Get full text OpenAccess
	Publikationsportal JuSER

Please use the identifier: http://hdl.handle.net/2128/19706 in citations.
Please use the identifier: http://dx.doi.org/10.1109/JEDS.2018.2864581 in citations.

In this combined experiment and simulation study we investigate a SiGe/Si based gatenormal tunneling field-effect transistor (TFET) with a pillar shaped contact to the tunneling junction which brings forth two significant advantages. The first, is improved electrostatics at the boundary of the tunneling junction which helps to diminish the influence of adverse tunneling paths, and thus, substantially sharpens the device turn on. The second, is a simplified fabrication of a dual-metal gate using a selfaligned process. We demonstrate the feasibility of the process and show the positive effect of a dual-metal gate in experiment. Overall the paper provides general guidelines for the improvement of the subthreshold swing in gate-normal TFETs which are not restrained to the material system.