This title appears in the Scientific Report :
2019
Please use the identifier:
http://dx.doi.org/10.1021/acs.nanolett.8b03023 in citations.
In-Gap States and Band-Like Transport in Memristive Devices
In-Gap States and Band-Like Transport in Memristive Devices
Point defects such as oxygen vacancies cause emergent phenomena such as resistive switching in transition-metal oxides, but their influence on the electron-transport properties is far from being understood. Here, we employ direct mapping of the electronic structure of a memristive device by spectrom...
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Personal Name(s): | Baeumer, Christoph (Corresponding author) |
---|---|
Funck, Carsten / Locatelli, Andrea / Menteş, Tevfik Onur / Genuzio, Francesca / Heisig, Thomas / Hensling, Felix / Raab, Nicolas / Schneider, Claus M. / Menzel, Stephan / Waser, Rainer / Dittmann, Regina | |
Contributing Institute: |
Elektronische Materialien; PGI-7 JARA-FIT; JARA-FIT |
Published in: | Nano letters, 19 (2019) 1, S. 54-60 |
Imprint: |
Washington, DC
ACS Publ.
2019
|
DOI: |
10.1021/acs.nanolett.8b03023 |
PubMed ID: |
30241437 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Publikationsportal JuSER |
Point defects such as oxygen vacancies cause emergent phenomena such as resistive switching in transition-metal oxides, but their influence on the electron-transport properties is far from being understood. Here, we employ direct mapping of the electronic structure of a memristive device by spectromicroscopy. We find that oxygen vacancies result in in-gap states that we use as input for single-band transport simulations. Because the in-gap states are situated below the Fermi level, they do not contribute to the current directly but impact the shape of the conduction band. Accordingly, we can describe our devices with band-like transport and tunneling across the Schottky barrier at the interface. |