Ultra-dünne Oxid- und Nitridschichten auf den intermetallischen Verbindungen NiAl und CoGa
Gaßmann, P. (Corresponding author)
Publikationen vor 2000; PRE-2000; Retrocat
Jülich Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag 1996
VIII, 148 p.
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Berichte des Forschungszentrums Jülich 3305
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Please use the identifier: http://hdl.handle.net/2128/21750 in citations.


The formation of oxide and nitride thin films on low indexed surfaces of the intermetallic alloys NiAl and CoGa has been studied. For this purpose, an ultra-high vacuum (UHV) apparatus which facilitates combined in situ investigations by means of scanning tunnelling microscopy (STM), electron energy loss spectroscopy (EELS), low-energy electron diffraction (LEED), Auger electron spectroscopy (AES) and thermal desorption spectroscopy (TDS) was developed. The design of the sampie manipulator allows the quasi-simultaneous use of the techniques without chan ging the sample temperature. In addition, a second apparatus with a combination of the samemethods except for STM was used. After the introduction in chapter 1, a concise review of the theory underlying the various techniques (with emphasis on ehe dielectric theory) is given. Chapter 3 deals with technical aspects of the two UHV apparatuses in which the experiments were performed. The design of the combined STM/EELSapparatus is described in detail. In chapter 4 a synopsis provides the most important properties of the involved materials (aluminium and gallium oxides, III-V nitride semiconductors and the intermetallic alloys NiAl and CoGa). The experimental results and the discussions are presented from chapter 5 to chapter 8. The thesis ends with a summary and an outlook. The results of the investigations can be summarised as follows: $\bullet$ NiAl(210), clean surface: The clean NiAl(210) surface does not exhibit the ideal truncated bulk structure but is reconstructed. Based on the STM and LEED studies a model of the surface is deduced in agreement with the experimental data. $\bullet$ Al$_{2}$O$_{3}$/NiAl(001) and Al$_{2}$O$_{3}$/NiAl(210): The formation of thin oxide films on NiAl(001) and NiAl(210) (i.e. the [...]