This title appears in the Scientific Report : 2019 

Proposal for Reconfigurable Magnetic Tunnel Diode and Transistor
Sasioglu, Ersoy (Corresponding author)
Blügel, Stefan / Mertig, Ingrid
Quanten-Theorie der Materialien; IAS-1
JARA - HPC; JARA-HPC
JARA-FIT; JARA-FIT
Quanten-Theorie der Materialien; PGI-1
ACS applied electronic materials, 1 (2019) 8, S. 1552 - 1559
Washington, DC ACS Publications 2019
10.1021/acsaelm.9b00318
Journal Article
Controlling Configuration-Based Phenomena
Controlling Spin-Based Phenomena
Please use the identifier: http://dx.doi.org/10.1021/acsaelm.9b00318 in citations.
We propose a reconfigurable magnetic tunnel diode and transistor based on half-metallic magnets (HMMs) and spin gapless semiconductors (SGSs). The two-terminal tunnel diode is composed of a HMM electrode and a SGS electrode separated by a thin insulating (I) tunnel barrier. Depending on the relative orientation of the magnetization of the electrodes, the magnetic tunnel diode allows the electrical current to pass in either one or the other direction. The three-terminal magnetic tunnel transistor consists of a HMM-I-SGS-I-HMM (emitter–base–collector) structure and can be switched on and off by application of a voltage to the base electrode and conducts current in both directions similar to conventional field-effect transistors. The unique energy band structure of the SGS-I-HMM junction prevents base–collector leakage currents and allows dual-mode operation of the transistor. Both devices can be configured by an external magnetic field or by the spin transfer torque switching. By employing the nonequilibrium Green’s function method combined with density functional theory, we demonstrate the reconfigurable rectification characteristics of the proposed diode based on sp-electron materials.