This title appears in the Scientific Report :
2019
Please use the identifier:
http://dx.doi.org/10.1038/s41565-019-0506-y in citations.
Please use the identifier: http://hdl.handle.net/2128/23180 in citations.
Selective area growth and stencil lithography for in situ fabricated quantum devices
Selective area growth and stencil lithography for in situ fabricated quantum devices
The interplay of Dirac physics and induced superconductivity at the interface of a 3D topological insulator (TI) with an s-wave superconductor (S) provides a new platform for topologically protected quantum computation based on elusive Majorana modes. To employ such S–TI hybrid devices in future top...
Saved in:
Personal Name(s): | Schüffelgen, Peter (Corresponding author) |
---|---|
Rosenbach, Daniel / Li, Chuan / Schmitt, Tobias W. / Schleenvoigt, Michael / Jalil, Abdur R. / Schmitt, Sarah / Kölzer, Jonas / Wang, Meng / Bennemann, Benjamin / Parlak, Umut / Kibkalo, Lidia / Trellenkamp, Stefan / Grap, Thomas / Meertens, Doris / Luysberg, Martina / Mussler, Gregor / Berenschot, Erwin / Tas, Niels / Golubov, Alexander A. / Brinkman, Alexander / Schäpers, Thomas / Grützmacher, Detlev | |
Contributing Institute: |
Physik Nanoskaliger Systeme; ER-C-1 JARA Institut Green IT; PGI-10 Helmholtz - Nanofacility; HNF JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Nature nanotechnology, 14 (2019) 9, S. 825 - 831 |
Imprint: |
London [u.a.]
Nature Publishing Group
2019
|
DOI: |
10.1038/s41565-019-0506-y |
PubMed ID: |
31358942 |
Document Type: |
Journal Article |
Research Program: |
Controlling Spin-Based Phenomena |
Link: |
Get full text Get full text OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/23180 in citations.
The interplay of Dirac physics and induced superconductivity at the interface of a 3D topological insulator (TI) with an s-wave superconductor (S) provides a new platform for topologically protected quantum computation based on elusive Majorana modes. To employ such S–TI hybrid devices in future topological quantum computation architectures, a process is required that allows for device fabrication under ultrahigh vacuum conditions. Here, we report on the selective area growth of (Bi,Sb)2Te3 TI thin films and stencil lithography of superconductive Nb for a full in situ fabrication of S–TI hybrid devices via molecular-beam epitaxy. A dielectric capping layer was deposited as a final step to protect the delicate surfaces of the S–TI hybrids at ambient conditions. Transport experiments in as-prepared Josephson junctions show highly transparent S–TI interfaces and a missing first Shapiro step, which indicates the presence of Majorana bound states. To move from single junctions towards complex circuitry for future topological quantum computation architectures, we monolithically integrated two aligned hardmasks to the substrate prior to growth. The presented process provides new possibilities to deliberately combine delicate quantum materials in situ at the nanoscale. |