This title appears in the Scientific Report : 2019 

A bismuth triiodide monosheet on Bi2Se3(0001)
Polyakov, Andrey
Mohseni, Katayoon / Castro, German R. / Rubio-Zuazo, Juan / Zeugner, Alexander / Isaeva, Anna / Chen, Ying-Jiun / Tusche, Christian / Meyerheim, Holger L. (Corresponding author)
Elektronische Eigenschaften; PGI-6
Scientific reports, 9 (2019) 1, S. 4052
[London] Macmillan Publishers Limited, part of Springer Nature 2019
Journal Article
Controlling Spin-Based Phenomena
Please use the identifier: in citations.
Please use the identifier: in citations.
A stable BiI3 monosheet has been grown for the first time on the (0001) surface of the topological insulator Bi2Se3 as confirmed by scanning tunnelling microscopy, surface X-ray diffraction, and X-ray photoemision spectroscopy. BiI3 is deposited by molecular beam epitaxy from the crystalline BiTeI precursor that undergoes decomposition sublimation. The key fragment of the bulk BiI3 structure, a2∞[I—Bi—I] layer of edge-sharing BiI6 octahedra, is preserved in the ultra-thin film limit, but exhibits large atomic relaxations. The stacking sequence of the trilayers and alternations of the Bi—I distances in the monosheet are the same as in the bulk BiI3 structure. Momentum resolved photoemission spectroscopy indicates a direct band gap of 1.2 eV. The Dirac surface state is completely destroyed and a new flat band appears in the band gap of the BiI3 film that could be interpreted as an interface state.