Entwicklung eines Rastertunnelmikroskops in Kombination mit einer Anlage zur Molekularstrahlepitaxie und Photoemissionsspektroskopie
Entwicklung eines Rastertunnelmikroskops in Kombination mit einer Anlage zur Molekularstrahlepitaxie und Photoemissionsspektroskopie
The current study presents a new type of scanning tunneling microscope for the investigation of III-V semiconductor surfaces under ultra high vacuurn conditions. The challenging task of achieving atomic resolution in a heavily vibrating environment demands a technically complex solution. Being this...
| Personal Name(s): | Daniels, C. (Corresponding author) |
|---|---|
| Contributing Institute: |
Publikationen vor 2000; PRE-2000; Retrocat |
| Imprint: |
Jülich
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
2000
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| Physical Description: |
VI, 108 p. |
| Document Type: |
Report Book |
| Research Program: |
Addenda |
| Series Title: |
Berichte des Forschungszentrums Jülich
3735 |
| Link: |
OpenAccess OpenAccess |
| Publikationsportal JuSER |
|
The current study presents a new type of scanning tunneling microscope for the investigation of III-V semiconductor surfaces under ultra high vacuurn conditions. The challenging task of achieving atomic resolution in a heavily vibrating environment demands a technically complex solution. Being this way, a major part of the work focuses on the conception, development, construction, and assembly of the system. Concurrent measurements illustrate how the resolving power increases as the microscope is being optimized successively. As a key feature of the microscope, its chamber is connected to a molecular beam epitaxy system (MBE) and a metalorganic molecular beam epitaxy system (MOMBE) via a transfer lock. Thus semiconductor surfaces grown in the epitaxy systems can be analysed $\textit{in-situ}$. Scanning tunneling microscopy adds to photoemission and electron deflection experiments and plays an essential role by completing the methods of surface characterization. Furthermore, a new preparation method for passivation of III-V semiconductor surfaces with arsenic is being presented. Another study investigates sputtered aluminium films on cobalt substrates. |