This title appears in the Scientific Report :
2020
Please use the identifier:
http://dx.doi.org/10.1002/pip.3244 in citations.
Please use the identifier: http://hdl.handle.net/2128/25288 in citations.
Transparent silicon carbide/tunnel SiO$_{2}$ passivation for c‐Si solar cell front side: Enabling J$_{sc}$ > 42 mA/cm 2 and i V$_{oc}$ of 742 mV
Transparent silicon carbide/tunnel SiO$_{2}$ passivation for c‐Si solar cell front side: Enabling J$_{sc}$ > 42 mA/cm 2 and i V$_{oc}$ of 742 mV
N‐type microcrystalline silicon carbide (μc‐SiC:H(n)) is a wide bandgap material that is very promising for the use on the front side of crystalline silicon (c‐Si) solar cells. It offers a high optical transparency and a suitable refractive index that reduces parasitic absorption and reflection loss...
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Personal Name(s): | Pomaska, Manuel (Corresponding author) |
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Köhler, Malte / Procel Moya, Paul / Zamchiy, Alexandr / Singh, Aryak / Kim, Do Yun / Isabella, Olindo / Zeman, Miro / Li, Shenghao / Qiu, Kaifu / Eberst, Alexander / Smirnov, Vladimir / Finger, Friedhelm / Rau, Uwe / Ding, Kaining | |
Contributing Institute: |
Photovoltaik; IEK-5 |
Published in: | Progress in photovoltaics, 28 (2020) 4, S. 321 - 327 |
Imprint: |
Chichester
Wiley
2020
|
DOI: |
10.1002/pip.3244 |
Document Type: |
Journal Article |
Research Program: |
Solar cells of the next generation |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/25288 in citations.
N‐type microcrystalline silicon carbide (μc‐SiC:H(n)) is a wide bandgap material that is very promising for the use on the front side of crystalline silicon (c‐Si) solar cells. It offers a high optical transparency and a suitable refractive index that reduces parasitic absorption and reflection losses, respectively. In this work, we investigate the potential of hot wire chemical vapor deposition (HWCVD)–grown μc‐SiC:H(n) for c‐Si solar cells with interdigitated back contacts (IBC). We demonstrate outstanding passivation quality of μc‐SiC:H(n) on tunnel oxide (SiO2)–passivated c‐Si with an implied open‐circuit voltage of 742 mV and a saturation current density of 3.6 fA/cm2. This excellent passivation quality is achieved directly after the HWCVD deposition of μc‐SiC:H(n) at 250°C heater temperature without any further treatments like recrystallization or hydrogenation. Additionally, we developed magnesium fluoride (MgF2)/silicon nitride (SiNx:H)/silicon carbide antireflection coatings that reduce optical losses on the front side to only 0.47 mA/cm2 with MgF2/SiNx:H/μc‐SiC:H(n) and 0.62 mA/cm2 with MgF2/μc‐SiC:H(n). Finally, calculations with Sentaurus TCAD simulation using MgF2/μc‐SiC:H(n)/SiO2/c‐Si as front side layer stack in an IBC solar cell reveal a short‐circuit current density of 42.2 mA/cm2, an open‐circuit voltage of 738 mV, a fill factor of 85.2% and a maximum power conversion efficiency of 26.6%. |