Photoelektronenspektroskopie von Mikrokirstallinem Silizium
Photoelektronenspektroskopie von Mikrokirstallinem Silizium
Hydrogenated microcrystalline silicon ($\mu$c-Si:H) thin films and heterojunctions of microcrystalline/amorphous silicon have been studied using in-situ x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), total yield (TY) and constant final state (CFS) spectroscopy....
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Personal Name(s): | Böhmer, E. (Corresponding author) |
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Contributing Institute: |
Publikationen vor 2000; PRE-2000; Retrocat |
Imprint: |
Jülich
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
2000
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Physical Description: |
V, 102 p. |
Document Type: |
Report Book |
Research Program: |
Addenda |
Series Title: |
Berichte des Forschungszentrums Jülich
3767 |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Hydrogenated microcrystalline silicon ($\mu$c-Si:H) thin films and heterojunctions of microcrystalline/amorphous silicon have been studied using in-situ x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), total yield (TY) and constant final state (CFS) spectroscopy. The electronic density of states and the valence band discontinuity were examined in order to gain a deeper understanding of the electronic st maure of microcrystalline silicon. Highsresolution valence band spectroscopy was utilized to distinguish amorphous silicon from crystalline material. This gave birth to a new and promising method of deterhüning the near-surface crystallinity of thin microcrystalline films. Furthermore, photoelectron yield spectroscopy provides a powerful tool for analysing heterostructures in the upper part of the valence band density of states. Due to its relatively large sampling depth and its high dynamical fange both valence band edges can be identified. Thus the analysis of the TY/CFS spectra allowed the direct deteltnination of the valence band discontinuity at the interface between microcrystalline and amorphous silicon. Being the classical methods to study band offsets, XPS and UPS were also applied to confirm the experimental results by analysing core level shifts. The experimental value of $\Delta$E =0.3 eV is in excellent agreement with results obtained using indirect methods. |