Metallorganische Molekularstrahlepitaxie von InP auf GaAs-Substraten für die Herstellung metamorpher Hochfrequenztransistoren
Metallorganische Molekularstrahlepitaxie von InP auf GaAs-Substraten für die Herstellung metamorpher Hochfrequenztransistoren
The present contribution is concerned with the highly lattice-mismatched growth of InPon GaAs-substrates by metalorganic molecular beam epitaxy (MOMBE) using TMIn andprecracked phosphine as the source materials. Here the objective was to deposit device-suitableInP-layers with low surface roughness,...
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Personal Name(s): | Schmidt, Roland (Corresponding author) |
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Contributing Institute: |
Publikationen vor 2000; PRE-2000; Retrocat |
Imprint: |
Jülich
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
2001
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Physical Description: |
IV, 146 p. |
Document Type: |
Report Book |
Research Program: |
ohne Topic |
Series Title: |
Berichte des Forschungszentrums Jülich
3932 |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
The present contribution is concerned with the highly lattice-mismatched growth of InPon GaAs-substrates by metalorganic molecular beam epitaxy (MOMBE) using TMIn andprecracked phosphine as the source materials. Here the objective was to deposit device-suitableInP-layers with low surface roughness, dislocation density and electrical conductivity.Growth-optimization of InP on GaAs was carried out by applying a multitudeof characterization methods, amongst others atomic force microscopy, x-ray diffraction,photoluminescence spectroscopy and Hall-effect-measurements. In particular, for the firsttime the dependence of the surface morphology on the growth parameters was investigatedsystematically. A growth model was formulated in order to explain the corresponding observations. Furthermore, the influence of both the growth parameters and a post-growthanneal on the optical and structural properties of the deposited InP-layers was investigated. Finally AlInAs/GaInAs-HEMT-structures (High Electron Mobility Transistors)were deposited and processed for the first time on the InP buffer-layers optimized asdescribed above, which demonstrated the device-suitability of the deposited InP/GaAs-heterostructures. All in all a contribution was achieved in solving the main problem forthe implementation of InP-based devices on GaAs-substrates. The predestination of thegrowth-method MOMBE for highly lattice-mismatched systems was also demonstrated. |