This title appears in the Scientific Report :
2020
Please use the identifier:
http://hdl.handle.net/2128/24516 in citations.
A First-Principles Study on the Role of Defects and Impurities in $\beta-In_2S_3$
A First-Principles Study on the Role of Defects and Impurities in $\beta-In_2S_3$
CdS is a well-established buffer layer for Cu(In, Ga)(S, Se)$_2$ (CIGS)-based thin film solar cells. However, because of its toxicity, low quantum efficiency at blue-wavelength region, and the drawbacks of the chemical bath deposition technique used for its growth, looking for an alternative buffer...
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Personal Name(s): | Ghorbani, Elaheh (Corresponding author) |
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Albe, Karsten | |
Contributing Institute: |
John von Neumann - Institut für Computing; NIC |
Published in: |
NIC Symposium 2020 |
Imprint: |
Jülich
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
2020
|
Physical Description: |
221 - 229 |
Conference: | NIC Symposium 2020, Jülich (Germany), 2020-02-27 - 2020-02-28 |
Document Type: |
Contribution to a book Contribution to a conference proceedings |
Research Program: |
Addenda |
Series Title: |
Publication Series of the John von Neumann Institute for Computing (NIC) NIC Series
50 |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
CdS is a well-established buffer layer for Cu(In, Ga)(S, Se)$_2$ (CIGS)-based thin film solar cells. However, because of its toxicity, low quantum efficiency at blue-wavelength region, and the drawbacks of the chemical bath deposition technique used for its growth, looking for an alternative buffer material has been a matter of debate in recent years. In this context, $\beta-In_2S_3$ is considered as a promising substitution for CdS. $\beta-In_2S_3$ crystallises in an ordered vacancy spinel-like structure, which can accommodate impurities diffusing from the absorber and/or front contact layers. Due to the existence of structural vacancies in its crystalline matrix, the electronic and optical properties of $\beta-In_2S_3$ can be effectively tuned through (un)intentional doping with a third element. In this contribution, we will report on the origin of n-type conductivity of $\beta-In_2S_3$, the influence of Cu and Na incorporation, the thermodynamic stability and electronic properties of $\beta-In_2S_3$, and the influence of O and Cl on electronic properties of $\beta-In_2S_3$. |