This title appears in the Scientific Report :
2010
Please use the identifier:
http://hdl.handle.net/2128/17228 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.3273388 in citations.
Synthesis, structure, and electrical behavior of Sr4Bi4Ti7O24
Synthesis, structure, and electrical behavior of Sr4Bi4Ti7O24
An n=7 Aurivillius phase, Sr4Bi4Ti7O24, with c=6.44 nm, was synthesized as an epitaxial (001)-oriented film. This phase and its purity were confirmed by x-ray diffraction and transmission electron microscopy. The material is ferroelectric, with a P-r=5.3 mu C/cm(2) oriented in the (001) plane and a...
Saved in:
Personal Name(s): | Zurbuchen, M.A. |
---|---|
Sherman, V.O. / Tagantsev, A.K. / Schubert, J. / Fong, D. / Streiffer, S.K. / Jia, Y. / Comstock, D.J. / Tian, W. / Schlom, D.G. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: | Journal of applied physics, 107 (2010) S. 024106 |
Imprint: |
Melville, NY
American Institute of Physics
2010
|
Physical Description: |
024106 |
DOI: |
10.1063/1.3273388 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Journal of Applied Physics
107 |
Subject (ZB): | |
Link: |
Get full text OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.3273388 in citations.
An n=7 Aurivillius phase, Sr4Bi4Ti7O24, with c=6.44 nm, was synthesized as an epitaxial (001)-oriented film. This phase and its purity were confirmed by x-ray diffraction and transmission electron microscopy. The material is ferroelectric, with a P-r=5.3 mu C/cm(2) oriented in the (001) plane and a paraelectric-to-ferroelectric transition temperature of T-C=324 K. Some indications of relaxorlike behavior are observed. Such behavior is out of character for Srn-1Bi2TinO3n+3 Aurivillius phases and is closer to the bulk behavior of doped SrTiO3, implying a spatial limit to the elastic interlayer interactions in these layered oxides. A finite-element solution to the interpretation of data from interdigitated capacitors on thin films is also described. |