This title appears in the Scientific Report :
2009
High temperature implantation: a solution for N-type junctions in strained silicon
High temperature implantation: a solution for N-type junctions in strained silicon
Saved in:
Personal Name(s): | Heiermann, W. |
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Buca, D. / Trinkaus, H. / Holländer, B. / Breuer, U. / Ghyselen, B. / Mantl, M. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Imprint: |
Pennington, NJ
Electrochemical Society (ECS)
2009
|
Physical Description: |
95 - 103 |
Document Type: |
Contribution to a book |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
ECS transactions
19 |
Publikationsportal JuSER |
Description not available. |