This title appears in the Scientific Report :
2021
Please use the identifier:
http://hdl.handle.net/2128/26709 in citations.
Please use the identifier: http://dx.doi.org/10.1063/5.0036024 in citations.
The importance of singly charged oxygen vacancies for electrical conduction in monoclinic HfO 2
The importance of singly charged oxygen vacancies for electrical conduction in monoclinic HfO 2
The point-defect structure of monoclinic HfO2 (m-HfO2) was studied by means of equilibrium electrical conductance measurements as a function of temperature 1050≤T/K≤1200 and oxygen partial pressure −20≤log(pO2/bar)≤−2. The total conductivity σ displayed similar behavior at each temperature examined....
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Personal Name(s): | Mueller, Michael P. (Corresponding author) |
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Gunkel, Felix / Hoffmann-Eifert, Susanne / De Souza, Roger A. | |
Contributing Institute: |
Elektronische Materialien; PGI-7 JARA-FIT; JARA-FIT JARA Institut Green IT; PGI-10 |
Published in: | Journal of applied physics, 129 (2021) 2, S. 025104 - |
Imprint: |
Melville, NY
American Inst. of Physics
2021
|
DOI: |
10.1063/5.0036024 |
Document Type: |
Journal Article |
Research Program: |
Memristive Materials and Devices |
Link: |
Published on 2021-01-08. Available in OpenAccess from 2022-01-08. Published on 2021-01-08. Available in OpenAccess from 2022-01-08. |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/5.0036024 in citations.
The point-defect structure of monoclinic HfO2 (m-HfO2) was studied by means of equilibrium electrical conductance measurements as a function of temperature 1050≤T/K≤1200 and oxygen partial pressure −20≤log(pO2/bar)≤−2. The total conductivity σ displayed similar behavior at each temperature examined. In oxidizing conditions (pO2≥10−7bar), the total conductivity increased with increasing oxygen partial pressure and was assigned to hole conduction. Around 10−10 bar, a region of almost constant conductivity was found; this is ascribed to ionic conduction by means of doubly charged oxygen vacancies. In reducing conditions (pO2≤10−16bar), the total conductivity surprisingly decreased with decreasing oxygen partial pressure. Defect-chemical modeling indicates that this behavior is consistent with the conversion of mobile doubly charged oxygen vacancies into less mobile singly charged vacancies by electron trapping. Point-defect concentrations at the oxygen partial pressures relevant to resistive switching devices are predicted and discussed. |