This title appears in the Scientific Report :
2021
Please use the identifier:
http://dx.doi.org/10.1109/TED.2021.3049765 in citations.
Please use the identifier: http://hdl.handle.net/2128/27370 in citations.
Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory
Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory
As one of the key aspects in the reliability of redox-based resistive switching memories (ReRAMs), maximizing their endurance is of high relevance for industrial applications. The major limitation regarding endurance is considered the excessive generation of oxygen vacancies during cycling, which ev...
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Personal Name(s): | Wiefels, Stefan (Corresponding author) |
---|---|
Von Witzleben, Moritz / Huttemann, Michael / Bottger, Ulrich / Waser, Rainer / Menzel, Stephan | |
Contributing Institute: |
Elektronische Materialien; PGI-7 JARA Institut Green IT; PGI-10 JARA-FIT; JARA-FIT |
Published in: | IEEE transactions on electron devices, 68 (2021) 3, S. 1024 - 1030 |
Imprint: |
New York, NY
IEEE
2021
|
DOI: |
10.1109/TED.2021.3049765 |
Document Type: |
Journal Article |
Research Program: |
Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC -, Teilvorhaben: Forschungszentrum Jülich Neuromorphic Computing and Network Dynamics |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/27370 in citations.
As one of the key aspects in the reliability of redox-based resistive switching memories (ReRAMs), maximizing their endurance is of high relevance for industrial applications. The major limitation regarding endurance is considered the excessive generation of oxygen vacancies during cycling, which eventually leads to irreversible RESET failures. Thus, the endurance could be increased by using combinations of switching oxide and ohmic electrode (OE) metal that provides a high barrier for the generation of oxygen vacancies [defect formation energy (DFE)]. In this work, we present a sophisticated programming algorithm that aims to maximize the endurance within reasonable measurement time. Using this algorithm, we compare ReRAM devices with four different OE metals and confirm the theoretically predicted trend. Thus, our work provides valuable information for device engineering toward higher endurance. |