This title appears in the Scientific Report :
2010
Please use the identifier:
http://dx.doi.org/10.1109/LED.2009.2038078 in citations.
RF Performance of InAlN/GaN HFETs and MOSHFETs with fTxLG up to 21GHz*um
RF Performance of InAlN/GaN HFETs and MOSHFETs with fTxLG up to 21GHz*um
The RF performance of lattice-matched InAlN/GaN heterostructure field-effect transistors (HFETs) and Al2O3/InAlN/GaN metal-oxide-semiconductor HFETs (MOSHFETs) with varied gate length was evaluated. The current gain cutoff frequency f(T) and the maximum oscillation frequency f(max) for the HFETs wit...
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Personal Name(s): | Kordos, P. |
---|---|
Mikulics, M. / Fox, A. / Gregusová, D. / Cico, K. / Carlin, J-F. / Grandjean, N. / Novák, J. / Fröhlich, K. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: | IEEE Electron Device Letters, 31 (2010) S. 180 - 182 |
Imprint: |
New York, NY
IEEE
2010
|
Physical Description: |
180 - 182 |
DOI: |
10.1109/LED.2009.2038078 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
IEEE Electron Device Letters
31 |
Subject (ZB): | |
Publikationsportal JuSER |
The RF performance of lattice-matched InAlN/GaN heterostructure field-effect transistors (HFETs) and Al2O3/InAlN/GaN metal-oxide-semiconductor HFETs (MOSHFETs) with varied gate length was evaluated. The current gain cutoff frequency f(T) and the maximum oscillation frequency f(max) for the HFETs with 0.3-mu m gate length were 54 and 58 GHz, respectively. An increase of f(T) to 61 GHz and of f(max) to 70 GHz was obtained for the MOSHFETs. The HFETs and MOSHFETs with different gate length yielded an f(T) x L-G product of 18 and 21 GHz . mu m, respectively. These are higher values than reported yet on InAlN/GaN devices and similar to those known for AlGaN/GaN HFETs. |