This title appears in the Scientific Report :
2021
Please use the identifier:
http://hdl.handle.net/2128/27885 in citations.
Please use the identifier: http://dx.doi.org/10.1038/s41560-021-00806-9 in citations.
A silicon carbide-based highly transparent passivating contact for crystalline silicon solar cells approaching efficiencies of 24%
A silicon carbide-based highly transparent passivating contact for crystalline silicon solar cells approaching efficiencies of 24%
A highly transparent passivating contact (TPC) as front contact for crystalline silicon (c-Si) solar cells could in principle combine high conductivity, excellent surface passivation and high optical transparency. However, the simultaneous optimization of these features remains challenging. Here, we...
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Personal Name(s): | Köhler, Malte (Corresponding author) |
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Pomaska, Manuel / Procel, Paul / Santbergen, Rudi / Zamchiy, Alexandr / Macco, Bart / Lambertz, Andreas / Duan, Weiyuan / Cao, Pengfei / Klingebiel, Benjamin / Li, Shenghao / Eberst, Alexander / Luysberg, Martina / Qiu, Kaifu / Isabella, Olindo / Finger, Friedhelm / Kirchartz, Thomas / Rau, Uwe / Ding, Kaining | |
Contributing Institute: |
Photovoltaik; IEK-5 Physik Nanoskaliger Systeme; ER-C-1 |
Published in: | Nature energy, 6 (2021) S. 529–537 |
Imprint: |
London
Nature Publishing Group
2021
|
DOI: |
10.1038/s41560-021-00806-9 |
Document Type: |
Journal Article |
Research Program: |
Materials Information Discovery |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1038/s41560-021-00806-9 in citations.
A highly transparent passivating contact (TPC) as front contact for crystalline silicon (c-Si) solar cells could in principle combine high conductivity, excellent surface passivation and high optical transparency. However, the simultaneous optimization of these features remains challenging. Here, we present a TPC consisting of a silicon-oxide tunnel layer followed by two layers of hydrogenated nanocrystalline silicon carbide (nc-SiC:H(n)) deposited at different temperatures and a sputtered indium tin oxide (ITO) layer (c-Si(n)/SiO2/nc-SiC:H(n)/ITO). While the wide band gap of nc-SiC:H(n) ensures high optical transparency, the double layer design enables good passivation and high conductivity translating into an improved short-circuit current density (40.87 mA cm−2), fill factor (80.9%) and efficiency of 23.99 ± 0.29% (certified). Additionally, this contact avoids the need for additional hydrogenation or high-temperature postdeposition annealing steps. We investigate the passivation mechanism and working principle of the TPC and provide a loss analysis based on numerical simulations outlining pathways towards conversion efficiencies of 26%. |