This title appears in the Scientific Report :
2022
Please use the identifier:
http://hdl.handle.net/2128/30856 in citations.
Please use the identifier: http://dx.doi.org/10.1103/PhysRevMaterials.6.024602 in citations.
Te-doped selective-area grown InAs nanowires for superconducting hybrid devices
Te-doped selective-area grown InAs nanowires for superconducting hybrid devices
Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices forMajorana physics and quantum computing. The transport properties of nanowires can be tuned either by fieldeffect or doping. We investigated a series of InAs nanowires the conductivity of which has been...
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Personal Name(s): | Perla, Pujitha |
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Faustmann, Anton / Kölling, Sebastian / Zellekens, Patrick / Deacon, Russell / Aruni Fonseka, H. / Kölzer, Jonas / Sato, Yuki / Sanchez, Ana M. / Moutanabbir, Oussama / Ishibashi, Koji / Grützmacher, Detlev / Lepsa, Mihail Ion / Schäpers, Thomas (Corresponding author) | |
Contributing Institute: |
JARA Institut Green IT; PGI-10 Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Physical review materials, 6 (2022) 2, S. 024602 |
Imprint: |
College Park, MD
APS
2022
|
DOI: |
10.1103/PhysRevMaterials.6.024602 |
Document Type: |
Journal Article |
Research Program: |
Exploratory Qubits |
Subject (ZB): | |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1103/PhysRevMaterials.6.024602 in citations.
Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices forMajorana physics and quantum computing. The transport properties of nanowires can be tuned either by fieldeffect or doping. We investigated a series of InAs nanowires the conductivity of which has been modified byn-type doping using tellurium. In addition to electron microscopy studies, the wires were also examined withatomic probe tomography to obtain information about the local incorporation of Te atoms. It was found thatthe Te atoms mainly accumulate in the core of the nanowire and at the corners of the {110} side facets. Theefficiency of n-type doping was also confirmed by transport measurements. As a demonstrator hybrid device, aJosephson junction was fabricated using a nanowire as a weak link. The corresponding measurements showed aclear increase of the critical current with increase of the dopant concentration. |