This title appears in the Scientific Report :
2022
Please use the identifier:
http://hdl.handle.net/2128/31280 in citations.
Please use the identifier: http://dx.doi.org/10.1103/PhysRevMaterials.6.064002 in citations.
Boron nitride on SiC(0001)
Boron nitride on SiC(0001)
In the field of van der Waals heterostructures, the twist angle between stacked two-dimensional layers has been identified to be of utmost importance for the properties of the heterostructures. In this context, we previously reported the growth of a single layer of unconventionally oriented epitaxia...
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Personal Name(s): | Lin, You-Ron |
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Franke, Markus / Parhizkar, Shayan / Raths, Miriam / Wen-zhe Yu, Victor / Lee, Tien-Lin / Soubatch, Serguei / Blum, Volker / Tautz, F. Stefan / Kumpf, Christian / Bocquet, François C. (Corresponding author) | |
Contributing Institute: |
Quantum Nanoscience; PGI-3 |
Published in: | Physical review materials, 6 (2022) 6, S. 064002 |
Imprint: |
College Park, MD
APS
2022
|
DOI: |
10.1103/PhysRevMaterials.6.064002 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen der Photoemissionstomographie Quantum Nanoscience |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1103/PhysRevMaterials.6.064002 in citations.
In the field of van der Waals heterostructures, the twist angle between stacked two-dimensional layers has been identified to be of utmost importance for the properties of the heterostructures. In this context, we previously reported the growth of a single layer of unconventionally oriented epitaxial graphene that forms in a surfactant atmosphere [F. C. Bocquet et al., Phys. Rev. Lett. 125, 106102 (2020)]. The resulting G-R0∘ layer is aligned with the SiC lattice, and hence represents an important milestone towards high-quality twisted bilayer graphene, a frequently investigated model system in this field. Here, we focus on the surface structures obtained in the same surfactant atmosphere, but at lower preparation temperatures at which a boron nitride template layer forms on SiC(0001). In a comprehensive study based on complementary experimental and theoretical techniques, we find—in contrast to the literature—that this template layer is a hexagonal BxNy layer, but not high-quality hBN. It is aligned with the SiC lattice and gradually replaced by low-quality graphene in the 0∘ orientation of the BxNy template layer upon annealing. |