This title appears in the Scientific Report :
2010
Please use the identifier:
http://dx.doi.org/10.1149/1.3322517 in citations.
Physicochemical and Electrical Properties of LaLuO3/Ge(100) Structures Submitted to Postdeposition Annealings
Physicochemical and Electrical Properties of LaLuO3/Ge(100) Structures Submitted to Postdeposition Annealings
$LaLuO_3$ films deposited on Ge were submitted to different postoxidation annealings. Electrical characterization revealed that such treatments can have beneficial effects on the characteristics of the dielectric layer. Nevertheless, $LaLuO_3$ interface characteristics are modified depending on anne...
Saved in:
Personal Name(s): | Radtke, C. |
---|---|
Krug, C. / Soares, G.V. / Baumvol, I.J.R. / Lopes, J. M. J. / Durgun Özben, E. / Nichau, A. / Schubert, J. / Mantl, S. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: | Electrochemical and solid-state letters, 13 (2010) S. G37 - G39 |
Imprint: |
Pennington, NJ
Soc.
2010
|
Physical Description: |
G37 - G39 |
DOI: |
10.1149/1.3322517 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Electrochemical and Solid State Letters
13 |
Publikationsportal JuSER |
$LaLuO_3$ films deposited on Ge were submitted to different postoxidation annealings. Electrical characterization revealed that such treatments can have beneficial effects on the characteristics of the dielectric layer. Nevertheless, $LaLuO_3$ interface characteristics are modified depending on annealing parameters and mostly on the employed atmosphere. Electrical characterization was correlated with physicochemical properties of the resulting structures, evidencing that oxygen annealing, in certain conditions, promotes substrate oxidation. A more stable interface without the formation of excessive Ge oxidized species was achieved using $N_2$. |