This title appears in the Scientific Report :
2010
Please use the identifier:
http://dx.doi.org/10.1143/JJAP.49.046504 in citations.
Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors
Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors
We report on the technology of a very thin oxidized Al sputtered film used for gate insulation and passivation in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs). Their transport properties are presented. The MOSHFET with the Al2O3 layer had improved sta...
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Personal Name(s): | Gregusova, D. |
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Gazi, S. / Sofer, Z. / Stoklas, R. / Dobrocka, E. / Mikulics, M. / Gregus, J. / Novak, J. / Kordos, P. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: | Japanese journal of applied physics, 49 (2010) S. 046504 |
Imprint: |
Tokyo
Inst. of Pure and Applied Physics
2010
|
Physical Description: |
046504 |
DOI: |
10.1143/JJAP.49.046504 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Japanese Journal of Applied Physics Part 1: Regular Papers, Short Notes and Review Papers
49 |
Subject (ZB): | |
Publikationsportal JuSER |
We report on the technology of a very thin oxidized Al sputtered film used for gate insulation and passivation in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs). Their transport properties are presented. The MOSHFET with the Al2O3 layer had improved static output and transfer characteristics compared with the reference heterostructure field-effect transistors (HFETs): (1) their saturation drain current I-DS was similar to 600 mA mm(-1) at gate voltage V-G = 1 V (HFETs with 2.5 mu m gates had similar to 430 mA mm(-1)); (2) their transconductance was 116-140 mS mm(-1) (HFETs had similar to 70 mS mm(-1)). (C) 2010 The Japan Society of Applied Physics |