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Experimente zur Herstellung von Nb3Sn, Nb3Ge und Nb3Si durch Ionenimplantation [E-Book] /
“...FGGB - Ion implantation, ion beam synthesis...”

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Bibliography and index of experimental range and stopping power data /
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Stopping cross sections of elements with z equal to 2 to 87 for LI ions with energies between 80 Kev and 840 Kev.
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Ion implantation, sputtering and their applications /
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Projected range statistics: semiconductors and related materials.
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Low incident ion energies.
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Herstellung und Untersuchung von ionenimplantierten IV-VI Halbleiter Mischkristallen für Infrarotdetektoren und Halbleiterlaser.
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Maier, H.
1975
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Ion implantation in semiconductors: science and technology : International conference on ion implantation in semiconductors and other materials 0004: proceedings : Osaka, 08.74.
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Namba, S.
1975
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Implantation of boron in silicon.
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Projected range statistics: semiconducotrs and related materials.
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High incident ion energies.
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Ion implantation /
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Ion implantation in semiconductors and other materials : International conference on ion implantation in semiconductors and other materials 0003: proceedings : Yorktown-Heights, NY, 11.12.72-14.12.72.
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Ion implantation in semiconductors : proceedings of the US Japan seminar : Kyoto, 09.08.71-12.08.71.
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Namba, S.
1972
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Ion implantation : International conference on ion implantation in semiconductors 0001: proceedings : Thousand-Oaks, CA, 04.05.70-09.05.70.
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Ion implantation in semiconductors : International conference on ion implantation in semiconductors 0002: physics and technology, fundamental and applied aspects: proceedings : Garmisch-Partenkirchen, 24.05.71-28.05.71.
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Ruge, I.
1971
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Ion implantation in semiconductors, silicon and germanium /
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Tables of range and stopping power of chemical elements for charged particles of energy 0.05 to 500 mev.
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