1
Metallorganische Molekularstrahlepitaxie von InP auf GaAs-Substraten für die Herstellung metamorpher Hochfrequenztransistoren [E-Book] /
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MOVPE von (AlGaIn)P unter dem Trägergas Stickstoff für LED-Strukturen [E-Book] /
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International Conference on Indium Phosphide and Related Materials. 11 : IPRM 1999 : May 16-20, 1999 Congress Centrum Davos, Davos, Switzerland : conference proceedings /
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1999
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International Conference on Indium Phosphide and Related Materials. 11 : IPRM 1999 : May 16-20, 1999 Congress Centrum Davos, Davos, Switzerland : postdeadline papers, /
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1999
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Beurteilung der optischen Eigenschaften von AlGaInP hergestellt in der metallorganischen Gasphasenepitaxie unter Stickstoff- oder Wasserstoffatmosphäre [E-Book] /
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Gallium nitride and related materials : the first International Symposium on Gallium Nitride and Related Materials, held November 27-December 1, 1995, Boston, Massachusetts, U.S.A. /
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MOVPE- Schichten aus III/V- Halbleitern auf (001)-Si- Substraten /
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Untersuchungen zur Epitaxie von Galliumarsenid mittels Elektronen- nergieverlustspektroskopie und selbstkonsistenter Bandverlaufsberechnungen [E-Book] /
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Advanced III-V compound semiconductor growth, processing and devices: symposium: proceedings : Boston, MA, 02.12.91-05.12.91.
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Pseudomorphe Indium Gallium Arsenid/Gallium(Aluminium)Arsenid Heterostrukturen: Wachstum und Charakterisierung.
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11
Liquid-phase epitaxial growth of III-V compound semiconductor materials and their device applications /
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12
Advances in materials, processing and devices in III-V compound semiconductors: symposium : Boston, MA, 28.11.88-02.12.88.
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Gallium arsenide technology /
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14
Gallium arsenide processing techniques /
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