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Gas- Quellen- Molekularstrahlepitaxie von beta-Eisendisilizid auf Si(111) mit Silan und Eisenpentacarbonyl [E-Book] /
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Präparation und elektronenspektroskopische Untersuchung von Gold auf Silizium(111) [E-Book] /
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Metallorganische Molekularstrahlepitaxie im Heterosystem GaAs/AlGaAs [E-Book] /
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Reaktions-, Wachstums- und Dotierungsuntersuchungen zur Epitaxie von GaAs mittels inelastischer Elektronenstreuung [E-Book] /
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Materials fundamentals of molecular beam epitaxy /
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Molekularstrahlepitaxie von Hochtemperatursupraleitern.
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Gas source molecular beam epitaxy: growth and properties of phosphorus containing III-V heterostructures.
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Handbook of sputter deposition technology : principles, technology, and applications /
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Untersuchungen neuer Aluminium-Quellen für das epitaktische Wachstum von Aluminiumgalliumarsenid mittels MOMBE [E-Book] /
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Mikrostrukturelle Charakterisierung ionenunterstützt aufgedampfter Aluminiumfilme [E-Book] /
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Silicon molecular beam epitaxy : International symposium on silicon molecular beam epitaxy 0004: proceedings : MRS spring meeting 1991 : Anaheim, CA, 29.04.91-03.05.91.
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Sputtering by particle bombardment vol 0003: characteristics of sputtered particles, technical applications.
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Zum Einbau von Kohlenstoff aus gasförmigen Quellen bei der Mombe von Galliumarsenid [E-Book] /
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Surface conditioning of vacuum systems : Topical conference on surface conditioning of vacuum systems : Annual symposium of the combined Southern California AVS chapters 0022 : Los-Angeles, CA, 03.04.89-05.04.89.
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Molecular beam epitaxy: fundamentals and current status.
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In situ Untersuchungen des MBE- und MOMBE-Wachstums von LaF3- und GaAs-Schichten auf Silizium [E-Book] /
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Ionized-cluster beam deposition and epitaxy /
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International symposium on silicon molecular beam epitaxy. 0002: proceedings : Meeting of the Electrochemical Society. 0172 : Honolulu, HI, 20.10.87-23.10.87.
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Silicon molecular beam epitaxy. vol 0001.
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Silicon molecular beam epitaxy. vol 0002.
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1988
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