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gallium arsenide
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E-Book
Verwendbarkeit von N2 als Trägergas bei der Niedrigdruck- Gasphasenepitaxie von GaAs and Al(x)Ga(1-x)As [E-Book] /
Hollfelder, Martin
1993
“
...
FGKF
-
Chemical
vapor
deposition
...
”
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2
Book
Chemical perspectives of microelectronics materials. 0002 : Biennial Meeting of Chemical Perspectives of Microelectronic Materials : 0002: proceedings : Materials Research Society...
Interrante, L. V.
1991
“
...
FGKF
-
Chemical
vapor
deposition
...
”
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1
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1
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2
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ZB
2
Name
Hollfelder, Martin
1
Interrante, L. V.
1
Subject
gallium arsenide
compound semiconductor
1
metallic film
1
microelectronics
1
semiconductor epitaxy
1
semiconductor processing
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semiconductor surface
1
silicon
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surface chemistry
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vapor phase epitaxy
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Classification
FGKF - Chemical vapor deposition
2
FAF - Materials research - comprehensive works
1
FGMH - Metallization, physics of microelectronics
1
FJKC - III - V semiconductors
1
Language
German
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