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FJKC - III - V semiconductors
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FJKC - III - V semiconductors
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1
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Etching of III-V semiconductors : an electrochemical approach /
Notten, P. H. L.
1991
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FGKJ
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Plasma
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Halbleiterätzverfahren: Kinetik, Verfahrensgrundlagen und Anwendungsgebiete von nasschemischen Ätzverfahren für Silizium, Galliumarsenid, Galliumphosphid und Indiumphosphid.
Loewe, H.
1990
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FGKJ
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Plasma
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,
etching
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IBN-1-2
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1
Name
Kelly, J. J.
1
Keppel, P.
1
Loewe, H.
1
Moritz, C.
1
Notten, P. H. L.
1
Van der Meerakker, J. E. A. M.
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Zach, D.
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Subject
III - V semiconductor
2
etching
2
semiconductor processing
1
silicon
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Classification
FGKJ - Plasma processing, etching
2
FJKC - III - V semiconductors
FJKB - Elemental semiconductors
1
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