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Structure, electronic properties, and interactions of defects in epitaxial GaN layers /
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International Conference on Indium Phosphide and Related Materials : 14-18 May 2000, Williamsburg Marriott, Williamsburg, Virginia, USA.
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2000
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International Conference on Indium Phosphide and Related Materials. 11 : IPRM 1999 : May 16-20, 1999 Congress Centrum Davos, Davos, Switzerland : postdeadline papers, /
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1999
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International Conference on Indium Phosphide and Related Materials. 11 : IPRM 1999 : May 16-20, 1999 Congress Centrum Davos, Davos, Switzerland : conference proceedings /
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1999
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Handbook series on semiconductor parameters. 2. Ternary and quaternary III-V compounds /
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Gallium nitride (GaN) II /
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Gallium nitride (GaN) 1 /
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GaN and related materials /
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Antimonide-related stained-layer heterostructures /
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Optical properties of III-V semiconductors: the influence of multi valley band structures.
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Kalt, H.
1996
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Handbook series on semiconductor parameters. 1. Si, Ge, C Diamond, GaAs, GaP, GaSb, InAs, InP, InSb.
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Imperfections in III/V materials /
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Minority carriers in III-V semiconductors : physics and applications /
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Physical properties of III-V semiconductor compounds : InP, InAs, GaAs, GaP, InGaAs, and InGaAsP /
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Very high speed integrated circuits : gallium arsenide LSI.
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Ikoma, T.
1990
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Gallium arsenide and related compounds. 1989 : International symposium on gallium arsenide and related compounds. 0016: proceedings : Karuizawa, 25.09.89-29.09.89.
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Ikoma, T.
1990
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Semiinsulating III-V materials : Conference on semiinsulating III-V materials 0006: proceedings : Toronto, 13.05.90-16.05.90.
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Gallium arsenide and related compounds 1990 : International symposium on gallium arsenide and related compounds 0017: proceedings : Jersey, 24.09.90-27.09.90.
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Indium phosphide : crystal growth and characterization.
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Gallium arsenide and related compounds. 1988 : International symposium on gallium arsenide and related compounds. 0015: proceedings : Atlanta, GA, 11.09.88-14.09.88.
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