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Semiconductor nanostructures : quantum states and electronic transport /
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Handbook of nitride semiconductors and devices. 3. GaN-based optical and electronic devices /
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Handbook of nitride semiconductors and devices. 2. Electronic and optical processes in nitrides /
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Handbook of nitride semiconductors and devices. 1. Materials properties, physics and growth /
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Fabrication and characterization of planar gunn diodes for monolithic microwave intergrated circuits /
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Nitride semiconductors : handbook on materials and devices /
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Silicon-based materials and devices. 2. Properties and devices /
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Silicon-based materials and devices. 1. Materials and processing /
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International Conference on Indium Phosphide and Related Materials : 14-18 May 2000, Williamsburg Marriott, Williamsburg, Virginia, USA.
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2000
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International Conference on Indium Phosphide and Related Materials. 11 : IPRM 1999 : May 16-20, 1999 Congress Centrum Davos, Davos, Switzerland : conference proceedings /
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1999
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International Conference on Indium Phosphide and Related Materials. 11 : IPRM 1999 : May 16-20, 1999 Congress Centrum Davos, Davos, Switzerland : postdeadline papers, /
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1999
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GaN and related materials /
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High brightness light emitting diodes /
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Antimonide-related stained-layer heterostructures /
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Structural and optical properties of porous silicon nanostructures : edited by G. Amato, C. Delerue and H.-J. von Bardeleben
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Strained-layer quantum wells and their applications /
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High speed heterostructure devices.
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Measurement of high speed signals in solid state devices.
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Very high speed integrated circuits : heterostructure.
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Ikoma, T.
1990
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GaAs devices and circuits /
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