1
Nanoscale compound semiconductors and their optoeledtronics applications /
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Group IV (Si)GeSn light emission and lasing studies /
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Investigation of GeSn as novel group IV semiconductor for electronic applications /
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Investigation of ternary nitride semiconductor alloys by scanning tunneling microscopy /
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Structure, electronic properties, and interactions of defects in epitaxial GaN layers /
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Chalcogenides : metastability and phase change phenomena /
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CMOS biomicrosystems : where electronics meet biology /
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DC and RF characterization of NiSi Schottky barrier MOSFETs with dopant segregation /
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Fabrication and characterization of planar gunn diodes for monolithic microwave intergrated circuits /
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Nanoscale phase separation and colossal magnetoresistance : the physics of manganites and related compounds /
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Nitride semiconductors : handbook on materials and devices /
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Intersubband transitions in quantum wells. 1. Physics and device applications /
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Liu, H. C.
2000
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Structural and optical properties of porous silicon nanostructures : edited by G. Amato, C. Delerue and H.-J. von Bardeleben
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GaAs and related materials : bulk semiconducting and superlattice properties /
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15
Minority carriers in III-V semiconductors : physics and applications /
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Physical properties of III-V semiconductor compounds : InP, InAs, GaAs, GaP, InGaAs, and InGaAsP /
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Growth and optical properties of wide gap II-VI low dimensional semiconductors : NATO advanced research workshop on growth and optical properties of wide gap II-VI low dimensional semiconductors : Regensburg, 02.08.88-06.08.88 /
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18
Gallium arsenide and related compounds 1978 : Gallium arsenide and related compounds: international symposium 0007 : Saint-Louis, MO, 24.09.1978-27.09.1978 /
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Ternary compounds. 1977 : invited and contributed papers : ternary compounds : international conference 3 : Edinburgh, 14.04.77-15.04.77 /
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Gallium, arsenide and related compounds : international symposium 6 : Saint-Louis, MO, 26.09.76-29.09.76 /c L. F. Eastman Hrsg.
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