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Trennung von Volumen- und Oberflächenrekombination in Silizium /
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Oxygen in silicon.
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Clusters of interstitial atoms in silicon and germanium /
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Doping in III-V semiconductors.
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Defects in silicon 0002 : Symposium on defects in silicon 0002: proceedings : Meeting of the Electrochemical Society 1991 : Washington, DC, 05.05.91-10.05.91.
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Hydrogen in semiconductors.
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Impurity diffusion and gettering in silicon : Symp : Impurity diffusion and gettering in semiconductors : symposium : Materials Research Society : Meeting. 1984 : Boston, MA, 27.11.1984-30.11.1984.
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Imperfections and impurities in semiconductor silicon /
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Physicochemical principles of semiconductor doping /
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Stacking fault energy in silicon [E-Book] /
Aerts, E.
1963
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