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Semiconductors. Subvol. A2, Pt. beta group IV-IV and III-V compounds. Impurities and defects in group IV elements, IV-IV and III-V compounds : supplement to vols. III/17,22 (print...

Landolt-Börnstein.
2003

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Nitride semiconductors : handbook on materials and devices /

Ruterana, Pierre
2003

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Semiconductors. Subvol. A1, Pt. beta. Group IV elements, IV-IV anmd III-V compounds Electronic, transport, optical and other properties : supplement to vols. III/17,22 (print versi...

Landolt-Börnstein
2002

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Amorphous and heterogeneous silicon-based films 2002 : symposium held April 2 - 5, 2002, San Francisco, California, USA [during 2002 MRS spring meeting] /

Cohen, J. David
2002

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Semiconductors. Subvol. A2, Pt. alpha group IV. Impurities and defects in group IV elements, IV-IV and III-V ccompounds Elements : supplement to vols. III/17,22 (print version) rev...

Landolt-Börnstein.
2002

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Silicon epitaxy /

Crippa, Danilo
2001

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Amorphous and heterogeneous silicon thin films 2000 : symposium held April 24 - 28, 2000, San Francisco, California, USA /

Collins, Robert W.
2001

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Semiconductors. Subvol. A1, Pt. alpha2. Group IV elements, IV-IV anmd III-V compounds Lattice properties : supplement to vols. III/17,22 (print version) revised and updated edition...

Landolt-Börnstein.
2001

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Properties of silicon germanium and SiGe:carbon /

Kasper, Erich
2000

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Technology and applications of amorphous silicon /

Street, Robert A.
2000

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Transportuntersuchungen an gekoppelten Silizium-Inseln /

Single, Christof.
2000

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Chemical mechanical polishing in silicon processing /

Li, Shin Hwa
2000

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Exzitonische Photolumineszenz von Silizium-Nanokristallen /

Heckler, Harald.
1999

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Germanium silicon : physics and materials /

Hull, Robert
1999

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Grundlegende Untersuchungen zu Phononenlokalisierung und Ramanstreuung in nanokristallinem Silizium sowie zur Photolumineszenz in diesem und relevanten Materialien /

Ossadnik, Christoph.
1999

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Diffusion in silicon : 10 years of research /

Fischer, D. J.
1998

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Untersuchungen zum Stossionisationsdurchbruch in p-Germanium mit einem Tieftemperatur-Rastertunnelmikroskop /

Muz, Christof.
1998

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Light emission in silicon : from physics to devices /

Lockwood, David J.
1998

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Mikrostrukturierung von porösem Silicium für optische und optoelektronische Anwendungen /

Krüger, Michael.
1998

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SiC materials and devices /

Park, Yoon Soo
1998

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Print Edition

Book 109

Conference Publication 27 Theses 17 Collection of Tables 12 Handbook, Textbook 11

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ZB 106 IEK-5 4 IKP 3 IBN-1-2 1 IBN-3-4 1 IEK-6-RSF 1 more ... IFF 1 see all ... less ...

Landolt-Börnstein. 7 Madelung, O. 7 Bean, J. C. 3 Kasper, E. 3 Chizhikov, D. M. 2 Fauchet, P. M. 2 more ... Glazov, Vasilij Mikhajlovich. 2 Grabmaier, J. 2 Khattak, C. P. 2 Landolt-Börnstein 2 Schastlivyi, Viktor Petrovich. 2 Schulz, M. 2 Zemskov, V. S. 2 Adachi, S. 1 Albrecht, Martin 1 Amato, Giampiero 1 Ammerlaan, C. A. J. 1 Anderson, Joseph Chapman 1 Aseev, Aleksandre Leonidovic 1 Bardeleben, H.-J. von 1 Bartsch, Heinz 1 Behren, Jens von. 1 Bimberg, D. 1 Blachnik, R. 1 Brandt, N. B. 1 Bullis, W. M. 1 Cerofolini, G. F. 1 Chudinov, S. M. 1 Ciszek, T. F. 1 Cohen, J. David 1 see all ... less ...

silicon 38 germanium 18 semiconductor 12 silicon carbide 12 amorphous silicon 7 porous silicon 7 more ... diamond 6 elemental semiconductor 6 impurity 6 III - V semiconductor 5 molecular beam epitaxy 4 optical properties 4 photoluminescence 4 physical properties 4 semiconductor processing 4 silicide 4 band structure 3 carbide 3 chemical vapor deposition 3 crystal defect 3 epitaxy 3 nanostructures 3 optoelectronics 3 amorphous film 2 amorphous semiconductor 2 defect structure 2 electronic structure 2 etching 2 gallium arsenide 2 lattice dynamics 2 see all ... less ...

FJKB - Elemental semiconductors 109 FGCD - Crystal growth of specific substances 20 FAAB - Solid state physics - reference books 19 FJEC - Amorphous semiconductors 13 FJHE - Defects and radiation effects in semiconductors 9 FJK - Specific semiconductor materials 9 more ... FJKC - III - V semiconductors 9 FAF - Materials research - comprehensive works 8 FFPE - Thin film electronic properties, semiconductor interfaces 7 FGK - Thin film technology, epitaxy 6 FGKC - Vacuum deposition, MBE 5 FJLB - Physics of semiconductor devices 5 FJNH - Excited states in solids 5 FNPD - Hard materials, refractory compounds 5 FFPG - Multilayer systems, quantum structures 4 FGM - Microelectronic technology 4 FJKD - Compound semiconductors 4 FJNE - Active centers in solids 3 FDKB - Diffusion in condensed matter 2 FEJP - Porous media, capillarity 2 FGGB - Ion implantation, ion beam synthesis 2 FGKJ - Plasma processing, etching 2 FGMH - Metallization, physics of microelectronics 2 CBR - Inorganic synthesis and reactions of metals and their compounds 1 CEL - Organic synthesis and reactions - general aspects 1 CHG - Physical chemistry - general aspects 1 CHGE - Physical chemistry of inorganic compounds - incl. physical properties 1 CUR - Infrared spectroscopy 1 FFGC - Electron spectroscopy 1 FFJK - Surface reactions 1 see all ... less ...

English 10 German 1

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