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Semiconductors. Subvol. A2, Pt. beta group IV-IV and III-V compounds. Impurities and defects in group IV elements, IV-IV and III-V compounds : supplement to vols. III/17,22 (print version) revised and updated edition of vols. III/17,22 (CD-ROM) : supplement to vols. III/ 22b (print version), revised and updated edition of vols. III/22b (CD-ROM) /
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Semiconductors. Subvol. A1, Pt. beta. Group IV elements, IV-IV anmd III-V compounds Electronic, transport, optical and other properties : supplement to vols. III/17,22 (print version) revised and updated edition of vols. III/17,22 (CD-ROM) : supplement to vols. III/17a, 22a (print version), revised and updated edition of vols. III/17a, 22a (CD-ROM) /
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Semiconductors. Subvol. A2, Pt. alpha group IV. Impurities and defects in group IV elements, IV-IV and III-V ccompounds Elements : supplement to vols. III/17,22 (print version) revised and updated edition of vols. III/17,22 (CD-ROM) : supplement to vols. III/ 22b (print version), revised and updated edition of vols. III/22b (CD-ROM) /
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Handbook series on semiconductor parameters. 1. Si, Ge, C Diamond, GaAs, GaP, GaSb, InAs, InP, InSb.
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Clusters of interstitial atoms in silicon and germanium /
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Untersuchung von Interdiffusion, elastischer Gitterverzerrung und Relaxation in epitaktischen Si(1-x)Ge(x)/Silicon Heterostrukturen mit Ionenstreuung [E-Book] /
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Halbleiter. Teilbd C. Technologie von Si, Ge und SiC /
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