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Semiconductors. Subvol. A2, Pt. beta group IV-IV and III-V compounds. Impurities and defects in group IV elements, IV-IV and III-V compounds : supplement to vols. III/17,22 (print version) revised and updated edition of vols. III/17,22 (CD-ROM) : supplement to vols. III/ 22b (print version), revised and updated edition of vols. III/22b (CD-ROM) /
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Semiconductors. Subvol. A2, Pt. alpha group IV. Impurities and defects in group IV elements, IV-IV and III-V ccompounds Elements : supplement to vols. III/17,22 (print version) revised and updated edition of vols. III/17,22 (CD-ROM) : supplement to vols. III/ 22b (print version), revised and updated edition of vols. III/22b (CD-ROM) /
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Silicon epitaxy /
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Photoelektronenspektroskopie von Mikrokirstallinem Silizium [E-Book] /
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Plasmaabscheidung von mikrokristallinem Silizium : Merkmale und Mikrostruktur und deren Deutung im Sinne von Wachstumsvorgängen [E-Book] /
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Transportuntersuchungen an gekoppelten Silizium-Inseln /
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Chemical mechanical polishing in silicon processing /
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Properties of silicon germanium and SiGe:carbon /
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Grundlegende Untersuchungen zu Phononenlokalisierung und Ramanstreuung in nanokristallinem Silizium sowie zur Photolumineszenz in diesem und relevanten Materialien /
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Germanium silicon : physics and materials /
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Diffusion in silicon : 10 years of research /
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Trennung von Volumen- und Oberflächenrekombination in Silizium /
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Light emission in silicon : from physics to devices /
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Handbook series on semiconductor parameters. 1. Si, Ge, C Diamond, GaAs, GaP, GaSb, InAs, InP, InSb.
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GeSi strained layers and their applications /
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Properties of strained and relaxed silicon germanium.
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Kasper, E.
1995
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Niedertemperatur-Silicium-Epitaxie durch plasmaunterstützte chemische Abscheidung aus der Gasphase /
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Light emission from silicon : Symposium on light emission from porous silicon: proceedings : E MRS spring conference: symposium E : Strasbourg, 04.05.93-07.05.93.
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Oxygen in silicon.
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Clusters of interstitial atoms in silicon and germanium /
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