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SiC materials and devices /
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Elektronische Struktur von Silizium-karbid-Polytypen untersucht mit Weichröntgenspektroskopie [E-Book] /
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Darstellung und Charakterisierung epitaktischer 3C-SiC Schichten auf Si(100) Substraten /
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Amorphous and crystalline silicon carbide 0004 : International conference on amorphous and crystalline silicon carbide and other IV- IV materials 0004: proceedings : ICACSC 1991: proceedings : Santa-Clara, CA, 10.10.91-11.10.91.
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Semiconductors. Group IV elements and III-V compounds /
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Diamond, silicon carbide and related wide bandgap semiconductors : Diamond, silicon carbide and related wide bandgap semiconductor: symposium : Boston, MA, 27.11.89-01.12.89.
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Amorphous and crystalline silicon carbide . 2: recent developments : proceedings of the 2nd international conference : ICACSC 1988 : Santa Clara, CA, December 15 - 16, 1988 /
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Amorphous and crystalline silicon carbide and related materials : International conference on amorphous and crystalline silicon carbide and related materials. 0001: proceedings : ICACSC. 1987: proceedings : Washington, DC, 10.12.87-11.12.87.
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Halbleiter. Teilbd C. Technologie von Si, Ge und SiC /
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Silicon carbide 1973 : International conference on silicon carbide 0003: proceedings : Miami-Beach, FL, 17.09.73-20.09.73.
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Group IV semiconducting materials.
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Silicon carbide 1968 : International conference on silicon carbide 0002: proceedings : University-Park, PA, 20.10.68-23.10.68.
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Silicon carbide : a high temperature semiconductor : International conference on silicon carbide 1: proceedings : Boston, MA, 02.04.59-03.04.59.
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