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III-V Compound Semiconductors and Devices [E-Book] : An Introduction to Fundamentals /
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Structure, electronic properties, and interactions of defects in epitaxial GaN layers [E-Book] /
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Structure, electronic properties, and interactions of defects in epitaxial GaN layers /
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Fundamentals of III-V Semiconductor MOSFETs [E-Book] /
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Fundamentals of III-V semiconductor MOSFETs /
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Properties of semiconductor alloys : group-IV, III-V and II-VI semiconductors /
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Interdiffusion von Heterostrukturen auf Antimonidbasis [E-Book] /
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Semiconductors. Subvol. A1, Pt. beta. Group IV elements, IV-IV anmd III-V compounds Electronic, transport, optical and other properties : supplement to vols. III/17,22 (print version) revised and updated edition of vols. III/17,22 (CD-ROM) : supplement to vols. III/17a, 22a (print version), revised and updated edition of vols. III/17a, 22a (CD-ROM) /
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Metallorganische Molekularstrahlepitaxie von InP auf GaAs-Substraten für die Herstellung metamorpher Hochfrequenztransistoren [E-Book] /
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MOVPE von (AlGaIn)P unter dem Trägergas Stickstoff für LED-Strukturen [E-Book] /
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Semiconductors. Subvol. A1, Pt. alpha2. Group IV elements, IV-IV anmd III-V compounds Lattice properties : supplement to vols. III/17,22 (print version) revised and updated edition of vols. III/17,22 (CD-ROM) : supplement to vols. III/17a, 22a (print version), revised and updated edition of vols. III/17a, 22a (CD-ROM) /
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GaN/Al(Ga)N heterostructures : MBE growth, electronic properties and polarization fields [E-Book] /
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International Conference on Indium Phosphide and Related Materials : 14-18 May 2000, Williamsburg Marriott, Williamsburg, Virginia, USA.
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2000
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Rastertunnelmikroskopie an III-V-Halbleitern : Nanostrukturierung und lokal angeregte Lumineszenz /
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Handbook series on semiconductor parameters. 2. Ternary and quaternary III-V compounds /
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International Conference on Indium Phosphide and Related Materials. 11 : IPRM 1999 : May 16-20, 1999 Congress Centrum Davos, Davos, Switzerland : conference proceedings /
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1999
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InP-based materials and devices : physics and technology /
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Fundamentals of III-V devices : HBTs, MESFETs and HFETs/HEMTs /
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Gallium nitride (GaN) II /
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International Conference on Indium Phosphide and Related Materials. 11 : IPRM 1999 : May 16-20, 1999 Congress Centrum Davos, Davos, Switzerland : postdeadline papers, /
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1999
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