1
Quantitative investigation of group III-nitride interfaces by a combination of scanning tunneling microscopy and off-axis electron holography [E-Book] /
2
Quantitative investigation of group III-nitride interfaces by a combination of scanning tunneling microscopy and off-axis electron holography /
Book
3
Metallorganische Molekularstrahlepitaxie von InP auf GaAs-Substraten für die Herstellung metamorpher Hochfrequenztransistoren [E-Book] /
4
Fundamentals of III-V devices : HBTs, MESFETs and HFETs/HEMTs /
Book
...FJL - Physics of solid state devices...