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Quantitative investigation of group III-nitride interfaces by a combination of scanning tunneling microscopy and off-axis electron holography /
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Spins in optically active quantum dots : concepts and methods /
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Fundamentals of III-V devices : HBTs, MESFETs and HFETs/HEMTs /
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Topics in growth and device processing of III-V semiconductors /
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III-V microelectronics : European summer school III-V microelectronics: lectures : European Materials Research Society meeting : Strasbourg, 26.11.90-30.11.90.
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Vertical III-V Semiconductor Devices : Doctoral thesis /
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