1
Zusammenhänge zwischen elektrischen Eigenschaften und geometrischen Parametern von Sililzium-Coulomb-Blockade-Strukturen /
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Handbook of thin film devices. 1. Hetero-structures for high performance devices /
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International Conference on Indium Phosphide and Related Materials : 14-18 May 2000, Williamsburg Marriott, Williamsburg, Virginia, USA.
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2000
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Monolithische Integration von PIN-Diode und vertikalem Transistor für einen optoelektrischen Empfänger auf GaAs-Basis [E-Book] /
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International Conference on Indium Phosphide and Related Materials. 11 : IPRM 1999 : May 16-20, 1999 Congress Centrum Davos, Davos, Switzerland : conference proceedings /
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1999
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International Conference on Indium Phosphide and Related Materials. 11 : IPRM 1999 : May 16-20, 1999 Congress Centrum Davos, Davos, Switzerland : postdeadline papers, /
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1999
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Thin film materials and devices - developments in science and technology : proceedings of the Tenth International School on Condensed Matter Physics : Varna, Bulgaria, 1-4 September 1998 /
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Fundamentals of modern VLSI devices /
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Taur, Yuan
1998
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Semiconductor device physics and simulation /
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Entwicklung und Charakterisierung elektronischer Bauelementstrukturen auf der Basis einkristalliner CoSi2/Si(100)-Heterostrukturen und sub-mikron-Strukturierung dieses Schichtsystems durch lokale Oxidation [E-Book]/
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International Electron Devices Meeting. 1997 : Washington, DC, December 7-10, 1997 : EDM technical digest.
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1997
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Characteristics and operation of MOS field effect devices.
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