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1
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Halbleiterätzverfahren: Kinetik, Verfahrensgrundlagen und Anwendungsgebiete von nasschemischen Ätzverfahren für Silizium, Galliumarsenid, Galliumphosphid und Indiumphosphid.
Loewe, H.
1990
Other Personal Name(s):
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...
Moritz
, C....
”
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Keppel, P.
1
Loewe, H.
1
Moritz, C.
1
Zach, D.
1
Subject
III - V semiconductor
1
etching
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semiconductor processing
1
silicon
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FGKJ - Plasma processing, etching
1
FJKB - Elemental semiconductors
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FJKC - III - V semiconductors
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