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Abhängigkeit des Leckstromes und der Dielektrizitätskonstanten in SrTiO3- und (Ba,Sr)TiO3-Dünnschichtkondensatoren von der Kontaktmetallisierung [E-Book] /

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Adsorption and catalysis on transition metals and their oxides.
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Advanced characterization techniques for thin film solar cells. 2 /
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Advanced characterization techniques for thin film solar cells. 1 /
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Advanced characterization techniques for thin film solar cells /
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Allotaxie: ein neues Verfahren zur Herstellung von Eisendisilizid- und Siliziumdioxid-Heterostrukturen in Silizium [E-Book] /

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Annual meeting of the Materials Research Society. 1980, A/C: electronic materials : Boston, MA, 16.11.1980-21.11.1980.
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1980
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Atomic scale structure of interfaces : Symposium on atomic scale structure of interfaces: proceedings : Fall meeting of MRS. 1989 : Boston, MA, 27.11.89-29.11.89.
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Banddiskontinuitäten an III-V Halbleitergrenzflächen : Verspannungsabhängigkeit und Einfluß von Zwischenschichten [E-Book] /

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Bandoffsets an Grenzflächen von hochverspannten III-V Halbleitern [E-Book] /

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Beurteilung der optischen Eigenschaften von AlGaInP hergestellt in der metallorganischen Gasphasenepitaxie unter Stickstoff- oder Wasserstoffatmosphäre [E-Book] /

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Carrier mobility in advanced channel materials using alternative gate dielectrics [E-Book] /

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Carrier mobility in advanced channel materials using alternative gate dielectrics /
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Characterization of epitaxial semiconductor films.
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Charakterisierung gestörter und nanokristalliner Halbleiterschichten mittels inelastischer Lichtstreuung [E-Book] /

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Chemical control of the electrical surface properties of n-doped transition metal oxides /
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Chemical control of the electrical surface properties of n-doped transition metal oxides [E-Book] /

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Chemistry and defects in semiconductor heterostructures : Symposium on chemistry and defects in semiconductor heterostructures : MRS spring meeting : San-Diego, CA, 24.04.89-27.04.89.
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Kawabe, M.
1989
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Chromium doped TiO2 sputtered thin films : synthesis, physical investigations and applications /
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Colloquium on Semiconductor Interfaces : Manchester, 07.04.87.
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1987
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