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gallium arsenide
FJLB - Physics of semiconductor devices
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gallium arsenide
FJLB - Physics of semiconductor devices
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Herstellung und Charakterisierung von GaAs Gunn-Dioden für Anwendungen bei 77 GHz [E-Book] /
Stock, Jürgen
2003
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Ultraschnelle optoelektronische und Materialeigenschaften von Stickstoff-haltigem GaAs /
Sinning, Steffen.
2005
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ZB
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Sinning, Steffen.
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Stock, Jürgen
1
Subject
gallium arsenide
Gunn effect
1
diode
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materials characterization
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microwave equipment
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nitrate
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optoelectronics
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Classification
FJK - Specific semiconductor materials
2
FJLB - Physics of semiconductor devices
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German
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