JuLib | Articles & more

1

Electronic properties in MOCVD mono-and bilayer MoS2 on CVD single-layer graphene on alpha-Al2O3 (0001) at atomic resolution

Wördenweber, Henrik
2022

2

Poster

Growth study for CVD of single layer graphene on c-plane sapphire

Wang, Zhaodong
2022

OpenAccess

3

Conference Presentation

Electronic properties in MOCVD mono- and bilayer MoS2 on CVD single-layer graphene on α-Al2O3 (0001) at atomic resolution

Wördenweber, Henrik
2022

4

Poster

CVD growth of single layer graphene on α-Al2O3 and multiscale analysis of MoS2/Graphene/α-Al2O3 2D-layer stacks

Wördenweber, Henrik
2021

OpenAccess

5

Poster

Nanoscale characterization of single layer graphene on α-Al2O3 (0001)

Wördenweber, Henrik
2021

OpenAccess

6

Journal Article

GaN heterostructures with diamond and graphene

Pécz, B.
2015

Semiconductor science and technology, 30 (2015) 11, S. 114001 -

7

Journal Article

Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal-polar GaN/AlInGaN interfaces

Reuters, B.
2014

Journal of physics / D, 47 (2014) 17, S. 175103

8

Journal Article

Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers

Reuters, Benjamin
2013

Journal of electronic materials, 42 (2013) 5, S. 826 - 832

9

Journal Article

Growth Studies on Quaternary AlInGaN Layers for HEMT Applicationf

Reuters, Benjamin
2012

Journal of electronic materials, 41 (2012) 5, S. 905 - 909

10

Conference Presentation

Untersuchungen zum Indiumeinbau und zur Relaxation in InGaN‐Schichten für die solareWasserstofferzeugung

Finken, M.
2012

11

Journal Article

Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy

Reuters, Benjamin
2012

Journal of applied physics, 112 (2012) 9, S. 093524 -

Published under German "Allianz" Licensing conditions on 2012-11-13. Available in OpenAccess from 2012-11-13

12

Journal Article

Quanternary Enhancement-Mode HFET With In Situ SiN Passivation

Ketteniss, N.
2012

IEEE Electron Device Letters, 33 (2012) S. 519 - 521

13

Journal Article

Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology

Lupták, R.
2011

Journal of vacuum science & technology / B, 29 (2011) S. 01A301

14

Poster

Strained Silicon on Insulator Fabrication for Advanced CMOS Devices

Buca, D.
2007

15

Journal Article

New method for the in situ determination of AlxGa1-xN composition in MOVPE by real-time optical reflectance

Hardtdegen, H.
2006

Physica status solidi / A, 203 (2006) S. 1645 - 1649

16

Conference Presentation

Si and SiGe layer growth studies using a novel CVD reactor design

Goryll, M.
2006

17

Journal Article

Terbium implanted AIN, photoluminescence properties

Lu, F.
2005

Journal of the Korean Physical Society, 46 (2005) S. 48 - 51

18

Journal Article

Magnetic and structural properties of GaN thin layers implanted with Mn, Cr, or V ions

Guzenko, V. A.
2004

Journal of applied physics, 96 (2004) S. 5663 - 5667

Get full text OpenAccess

19

Journal Article

Si(111) as alternative substrate for AlGaN/GaN HEMT

Dikme, Y.
2003

Physica status solidi / C (2003) S. 2385 - 2388

20

Journal Article

Wachstum und Charakterisierung von AlGaN/GaN HEMTs auf Si-Substraten

Kalisch, H.
2003

Verhandlungen der Deutschen Physikalischen Gesellschaft, 38 (2003) S. 220

Narrow Search Results