JuLib | Articles & more

1

Contribution to a conference proceedings

Hybrid optoelectronics based on a nanocrystal/III-N nano-LED platform

Marso, M.
2016

2

Contribution to a book
Contribution to a conference proceedings

Electrical and optical characterization of freestanding Ge1Sb2Te4 nano-membranes integrated in coplanar strip lines

Mikulics, M.
2016

3

Contribution to a conference proceedings

Highly reliable long-term operation of AlGaN/GaN/AlN HFETs grown on silver substrate

Fox, A.
2016

4

Poster

Novel Douple-Level-T-Gate tecnology

Fox, Alfred
2014

2014

5

Contribution to a book
Contribution to a conference proceedings

Novel Douple-Level-T-Gate Technology

Fox, Alfred
2014

6

Journal Article

Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements

Mikulics, M.
2012

Physica status solidi / C, 9 (2012) S. 911-914

7

Journal Article

Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate

Mikulics, M.
2012

Vacuum, 86 (2012) 6, S. 754 - 756

8

Journal Article

Non-uniform distribution of induced strain in a gate recessed AlGaN/GaN structure evaluated by micro-PL measurements

Mikulics, M.
2012

Semiconductor science and technology, 27 (2012) S. 105008

9

Proceedings

Towards future III-nitride based THz OEICs in the UV range

Fox, Alfred
2012

10

Journal Article

GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD

Kordos, P.
2012

Semiconductor science and technology, 27 (2012) 11, S. 115002 -

11

Journal Article

Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition

Kordos, P.
2012

Applied physics letters, 100 (2012) S. 142113

Get full text Published under German "Allianz" Licensing conditions on 2012-04-05. Available in OpenAccess from 2012-04-05

12

Contribution to a book
Contribution to a conference proceedings

Towards future III-nitride based THz OEICs in the UV range

Fox, A.
2012

13

Contribution to a book
Contribution to a conference proceedings

GaAs nanowhiskers for femtosecond photodetectors and THz emitters

Mikulics, M.
2012

14

Journal Article

Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System

Mikulics, M.
2011

IEEE photonics technology letters, 23 (2011) S. 1189 - 1191

15

Journal Article

RF Performance of InAlN/GaN HFETs and MOSHFETs with fTxLG up to 21GHz*um

Kordos, P.
2010

IEEE Electron Device Letters, 31 (2010) S. 180 - 182

16

Talk (non-conference)

Comparison of AlGaN/GaN, HFETs and MOSFETs in prospect of oscillator design

Fox, A.
2010

17

Contribution to a book
Contribution to a conference proceedings

Comparison of AlGaN/GaN, HFETs and MOSFETs in prospect of oscillator design

Fox, A.
2010

18

Journal Article

InAIM/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAIN

Mikulics, M.
2010

Applied physics letters, 97 (2010) S. 173505

Get full text OpenAccess OpenAccess

19

Journal Article

Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors

Gregusova, D.
2010

Japanese journal of applied physics, 49 (2010) S. 046504

20

Journal Article

Finite element simulation of metal-semiconductor-metal photodetector

Guarino, G.
2009

Solid state electronics, 53 (2009) S. 1144 - 1148

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