JuLib | Articles & more - {2005}

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1

Journal Article

SiO2/AlGaN/GaN MOSHFET with 0.7 µm gate-length and fmax/fT of 40/24 GHz

Bernát, J.
2005

Electronics letters, 41 (2005) S. 667 - 668

“...2005...”

2

Conference Presentation

Investigation of AlGaN/GaN-based MOSHFET performance relative to conventional and SiO2-passivated HFETs

Heidelberger, G.
2005

“...2005...”

3

Conference Presentation

Bias-dependent spectral responsivity of AlGaN/GaN photodetectors based on an AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2005

“...2005...”

4

Conference Presentation

Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs

Heidelberger, G.
2005

“...2005...”

5

Conference Presentation

An AlGaN/GaN two-color photodetector based on AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2005

“...2005...”

6

Journal Article

High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors

Heidelberger, G.
2005

Applied physics letters, 87 (2005) S. 143501

“...2005...”
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