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Lüth, H. AND Heuken, M. AND Nastase, N.

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Lüth, H. AND Heuken, M. AND Nastase, N.

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Conference Presentation 3 Journal Article 3 Poster 2 Talk (non-conference) 1

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1

Journal Article

Wachstum und Charakterisierung von AlGaN/GaN HEMTs auf Si-Substraten

Kalisch, H.
2003

Verhandlungen der Deutschen Physikalischen Gesellschaft, 38 (2003) S. 220

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Journal Article

The influence of nucleation parameters on GaN buffer layer properties used for HEMT application

Nastase, N.
2001

Physica status solidi / A, 188 (2001) S. 647

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Journal Article

AlGaN/GaN round-HEMTs on (111) silicon substrates

Javorka, P.
2001

Electronics letters, 37 (2001) S. 1478

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Talk (non-conference)

A comparison of the material properties of AlGaN/GaN epilayers for HEMT application grown on different sapphire substrates

Nastase, N.
2001

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5

Investigation of AIN nucleation layer growth on sapphire substrates with respect to GaN buffer characteristics for HEMT application

Nastase, N.
2001

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6

On the influence of the nucleation parameters on GaN buffer layer properties used for HEMT application

Nastase, N.
2001

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Conference Presentation

GaN and AlGaN/GaN HEMT on (111) Silicon Substrates

Alam, A.
2001

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Conference Presentation

The Influence of Nucleation Parameters on GaN Buffer Layer Properties Used for HEMT Application

Nastase, N.
2001

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9

Conference Presentation

Influence of AlN and GaN nucleation layers on the properties of doped and undoped AlGaN/GaN HEMT structures grown by MOVPE

Alam, A.
2001

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Publications database 9

Conference Presentation 3 Journal Article 3 Poster 2 Talk (non-conference) 1

Heuken, M. Lüth, H. Nastase, N. Alam, A. 8 Hardtdegen, Hilde 8 Bay, H. 6 more ... Schmidt, R. 5 Kordos, P. 4 Marso, M. 3 Javorka, P. 2 Juergensen, H. 2 Bremser, M. 1 Carius, R. 1 Dadgar, A. 1 Dikme, Y. 1 Fieger, M. 1 Jansen, R. H. 1 Kalisch, H. 1 Klocken, H. 1 Kocan, M. 1 Krost, A. 1 Schineller, B. 1 Szymakowski, A. 1 see all ... less ...

Halbleiterschichtsysteme und Mesoskopische Strukturen 8 Ionentechnik 4 Halbleiterbauelemente und Analytik 1 Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik 1

Institut für Halbleiterschichten und Bauelemente; ISG-1 9 Institut für Photovoltaik; IPV 1

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