JuLib | Articles & more

1

Journal Article

Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate

Marso, M.
2003

Physica status solidi / A, 200 (2003) S. 179 - 182

2

Journal Article

Wachstum und Charakterisierung von AlGaN/GaN HEMTs auf Si-Substraten

Kalisch, H.
2003

Verhandlungen der Deutschen Physikalischen Gesellschaft, 38 (2003) S. 220

3

Journal Article

Investigation of AlGaN/GaN HEMTs on Si substrate using backgating

Marso, A.
2002

Physica status solidi / C (2002) S. 65 - 68

4

Journal Article

Growth and characterisation of AlGaN/GaN/HEMT on silicon substrates

Kalisch, H.
2002

Physica status solidi / A, 194 (2002) S. 464 - 467

5

Journal Article

Photoionization spectroscopy of traps in doped and undoped AlGaN/GaN HEMTs

Wolter, M.
2002

Physica status solidi / C (2002) S. 82 - 85

6

Journal Article

Photo-ionization spectroscopy of traps in AlGaN/GaN high-electron mobility transistors

Wolter, M.
2002

Journal of electronic materials, 31 (2002) S. 1321 - 1324

7

Journal Article

AlGaN/GaN HEMTs on (111) silicon substrates

Javorka, P.
2002

IEEE Electron Device Letters, 23 (2002) S. 4 - 6

OpenAccess

8

Journal Article

AlGaN/GaN round-HEMTs on (111) silicon substrates

Javorka, P.
2001

Electronics letters, 37 (2001) S. 1478

9

Journal Article

The influence of nucleation parameters on GaN buffer layer properties used for HEMT application

Nastase, N.
2001

Physica status solidi / A, 188 (2001) S. 647

10

Journal Article

AlGaN/GaN HEMT optimization using the RoundHEMT technology

Marso, M.
2001

Physica status solidi / A, 188 (2001) S. 199

11

Journal Article

Magneto-transport in InAs-quantum wells using InPSb as a barrier material

Schäpers, T.
1999

Superlattices and microstructures, 23 (1999) S. 307

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