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Lüth, H.
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Kaluza, N.
2006
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Lüth, H.
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Kaluza, N.
2006
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1
Talk (non-conference)
Optimization of Cr-doped GaN growth by MOVPE
Cho, Y. S.
2006
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2
Poster
Systematic study on the growth mechanism of GaN/sapphire epilayers grown with different H2 and N2 carrier gas
Cho, Y. S.
2006
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3
Conference Presentation
The growth of Cr-doped GaN by MOVPE for spintronics
Cho, Y. S.
2006
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4
Poster
Chromium Doped GaN Layers for Spintronics
Kaluza, N.
2006
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5
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Influences of H2/N2 Carrier Gas Mixtures on the Characteristics of GaN Epilayers
Cho, Y. S.
2006
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6
Conference Presentation
Chromium doped GaN layers for spintronics
Kaluza, N.
2006
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Microphotoluminescence Studies on Single GaN Nanocolumns
Sebald, K.
2006
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8
Journal Article
The effect of carrier gas on GaN epilayer characteristics
Cho, Y. S.
2006
Physica status solidi / C, 3 (2006) S. 1408 - 1411
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9
Journal Article
The State of Strain in Single GaN Nanocolumns As Derived from Micro-Photoluminescence Measurements
Thillosen, N.
2006
Nano letters, 6 (2006) S. 704 - 708
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Hardtdegen, Hilde
9
Kaluza, N.
Lüth, H.
Cho, Y. S.
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Thillosen, N.
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Breuer, U.
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Guzenko, V.
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Schäpers, Thomas
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Fecioru-Morariu, M.
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Ghadimi, M. R.
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Steins, R.
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Calarco, R.
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Gutowski, J.
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Heidelberger, G.
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Meijers, R.
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Montanari, S.
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Sebald, K.
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Christen, J.
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Schmalbuch, K.
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Grundlagen für zukünftige Informationstechnologien
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Center of Nanoelectronic Systems for Information Technology; CNI
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Institut für Halbleiterschichten und Bauelemente; ISG-1
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