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1

Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements

Mikulics, M.
2012

Physica status solidi / C, 9 (2012) S. 911-914

2

Journal Article

Non-uniform distribution of induced strain in a gate recessed AlGaN/GaN structure evaluated by micro-PL measurements

Mikulics, M.
2012

Semiconductor science and technology, 27 (2012) S. 105008

3

Journal Article

Traveling-wave photomixer with recessed interdigitated contacts on low-temperature-grown GaAs

Mikulics, M.
2006

Applied physics letters, 88 (2006) S. 041118

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4

Journal Article

Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs

Heidelberger, G.
2006

Physica status solidi / A, 203 (2006) S. 1876 - 1881

5

Journal Article

Origin of Improved RF Performance of AlGaN/GaN MOSHFETs Compared to HFETs

Marso, M.
2006

IEEE Transactions on Electron Devices, 53 (2006) S. 1517 - 1523

6

Journal Article

Terahertz photonic mixers as local oscillators for hot electron bolometer and superconductor-insulator-superconductor astronomical receivers

Cámara Mayorga, I.
2006

Journal of applied physics, 100 (2006) S. 043116-1 - 043116-4

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7

Journal Article

Traveling-wave photomixers fabricated on high energy nitrogen-ion-implanted GaAs

Mikulics, M.
2006

Applied physics letters, 89 (2006) S. 071103

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8

Journal Article

GaAs photodetectors prepared by high-energy and higt-dose nitrogen implantation

Mikulics, M.
2006

Applied physics letters, 89 (2006) S. 091103

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9

Journal Article

Ultrafast and Highly Sensitive Photodetectors With Recessed Electrodes Fabricated on Low-Temperature-Grown GaAs

Mikulics, M.
2006

IEEE photonics technology letters, 18 (2006) S. 820 - 822

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10

Journal Article

Impact of surface treatment under the gate on the current collapse of unpassivated AlGaN/GaN heterostructure field-effect transistors

Kordos, P.
2006

Semiconductor science and technology, 21 (2006) S. 67 - 71

11

Journal Article

Photomixers fabricated on nitrogen-ion-implanted GaAs

Mikulics, V. V.
2005

Applied physics letters, 87 (2005) S. 041106

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12

Journal Article

Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN

Mikulics, V. V.
2005

Applied physics letters, 86 (2005) S. 211110-1 - 211110-3

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13

Journal Article

High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors

Heidelberger, G.
2005

Applied physics letters, 87 (2005) S. 143501

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14

Journal Article

Growth and properties of GaN and AlN layers on silver substrates

Mikulics, V. V.
2005

Applied physics letters, 87 (2005) S. 212109

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15

Journal Article

Ultrafast Low-Temperature-Grown Epitaxial GaAs Photodetectors Transferred on Flexible Plastic Substrates

Mikulics, V. V.
2005

IEEE photonics technology letters, 17 (2005) S. 1725 - 1727

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16

Journal Article

SiO2/AlGaN/GaN MOSHFET with 0.7 µm gate-length and fmax/fT of 40/24 GHz

Bernát, J.
2005

Electronics letters, 41 (2005) S. 667 - 668

17

Journal Article

Influence of SiO2 and Si3N4 Passivation on AlGaN/GaN/Si HEMT Performance

Javorka, P.
2003

Electronics letters, 39 (2003) S. 1155

18

Journal Article

Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs

Bernát, J.
2003

Solid state electronics, 47 (2003) S. 2097 - 2103

19

Journal Article

Patterning of 25-nm-wide silicon webs with an aspect ratio of 13

Trellenkamp, S.
2003

Microelectronic engineering, 67-68 (2003) S. 376 - 380

20

Journal Article

Patterning of 25nm wide Silicon Ridges for vertical Double-Gate MOSFETs

Trellenkamp, S.
2003

Verhandlungen der Deutschen Physikalischen Gesellschaft, 38 (2003) S. 5

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