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1

Journal Article

Wachstum und Charakterisierung von AlGaN/GaN HEMTs auf Si-Substraten

Kalisch, H.
2003

Verhandlungen der Deutschen Physikalischen Gesellschaft, 38 (2003) S. 220

2

Conference Presentation

Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate

Marso, M.
2003

3

Journal Article

Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate

Marso, M.
2003

Physica status solidi / A, 200 (2003) S. 179 - 182

4

Conference Presentation

Wachstum und Charakterisierung von AlGaN/GaN HEMTs auf Silizium-Substraten

Dikme, Y.
2002

5

Journal Article

Growth and characterisation of AlGaN/GaN/HEMT on silicon substrates

Kalisch, H.
2002

Physica status solidi / A, 194 (2002) S. 464 - 467

6

Conference Presentation

Growth and characterisation of AlGaN/GaN-HEMTs on silicon substrates

Dikme, Y.
2002

7

Talk (non-conference)

From GaN epitaxy to design-oriented device modeling : the GaN electronics consortium at Aachen, Germany

Jansen, R.
2001

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