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Lüth, H.
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Moers, J.
Contribution to a conference proceedings
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Lüth, H.
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1
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Vertical Double-Gate MOSFETs
Moers, J.
2004
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Vertical p-channel Double-Gate MOSFETs
Moers, J.
2003
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Double gate MOSFET with vertical channel
Moers, J.
2003
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Process steps for a double gate MOSFET with vertical layout
Trellenkamp, S.
2002
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Thin low-temperature gate oxides for vertical field-effect transistors
Goryll, M.
2002
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Vertical double-gate MOSFET based on epitaxial growth by LPCVD
Moers, J.
2001
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Vertical silicon MOSFETs based on selective epitaxial growth
Moers, J.
2000
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Mantl, S.
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Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
5
Halbleiterbauelemente und Analytik
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Halbleiterschichtsysteme und Mesoskopische Strukturen
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Institut für Halbleiterschichten und Bauelemente; ISG-1
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Institut für Schicht- und Ionentechnik; ISI
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